摘要
提出了一种新型的MTCMOS电路结构。该结构在Tri-Mode MTCMOS电路基础上,结合叠加门控技术,进行电路结构改进,解决了Tri-Mode MTCMOS电路结构在高电压情况下抑制地线反弹噪声效果不明显的问题。电路采用SMIC 0.18μm CMOS工艺设计,使用HSPICE进行仿真。仿真结果表明,该结构与传统的MTCMOS电路相比,平均地线反弹减少约70%,比TriMode MTCMOS结构提高15%以上,特别在高电压情况下,平均提升40%。
A new MTCMOS circuit structure was proposed. Based on Tri-Mode MTCMOS structure and stacking power gating technology, the problem was solved that the traditional Tri-Mode MTCMOS circuit structure made an ineffectual effort to suppress the ground bouncing noise under high voltage condition. The circuit was designed based on SMIC 0.18 μm CMOS technology. The HSPICE simulation results showed that the ground bounce of the new circuit structure was averagely reduced about 70% compared with the traditional MTCMOS circuit, which was over 15% than the traditional Tri-Mode MTCMOS circuit. Especially under high voltage condition, it was more than 40% averagely.
出处
《微电子学》
CAS
CSCD
北大核心
2015年第5期657-660,665,共5页
Microelectronics