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Effects of Thermal Annealing on the Spectral Properties of GaAsBi Alloys Grown by Molecular Beam Epitaxy (MBE)

Effects of Thermal Annealing on the Spectral Properties of GaAsBi Alloys Grown by Molecular Beam Epitaxy (MBE)
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机构地区 Department of Physics
出处 《材料科学与工程(中英文A版)》 2015年第7期249-256,共8页 Journal of Materials Science and Engineering A
关键词 分子束外延生长 热退火 光谱性质 MBE GAAS衬底 合金 生长温度 光学性能 MBE (Molecular beam epitaxy), thermal annealing, optical properties, PL (Photoluminescence), semiconductors.
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参考文献11

  • 1Skierbiszewski, C., Perl in, P., Wisniewski, P., Suski, T., Geisz, J. F. and Hinged, K. et al. 2001. "Band Structure and Optical Properties of InyGal-yAsl-xNx Alloys." Phys.Rev. B 65: 035207.
  • 2Kunishige, O. 2002. "Metalorganic Vapor Phase Epitaxial Growth of Metastable GaAsa-xBi Alloy." J. Cryst. Growth 237: 1481-5.
  • 3Fluegel, B., Francoeur, S., Mascarenhas, A., Tixier, S., Young, E. C. and Tiedje, T. 2006. "Giant Spin-Orbit Bowing in GaAsl-xBi." Phys. Rev. Lett. 97:067205-8.
  • 4Bertulis, K., Krotkus, A., Aleksejenko, G., Paebutas, V., Adomaviius, R. and Molis, G. 2006. "GaBiAs: A Material for Optoelectronic Terahertz Devices." Appl. Phys. Lett. 88:201112.
  • 5Janotti, A., Wei, S. H. and Zhang, S. B. 2002. "Theoretical Study of the Effects of Isovalent Co-Alloying of Bi and N in GaAs." Phys. Rev. B 65:115203.
  • 6Michel, C., Baranovskii, S. D., Thomas, P., Heimbrodt, W., Elm, M. T. and Klar, P. J. 2007..1. Appl. Phys. 102: 073712.
  • 7Shaft, M. 2010. "Electrical and Optical Studies of Dilute Nitride and Bismide Compound Semiconductors. " Ph.D. thesis, The University of Nottingham, UK.
  • 8Tixier, S., Adamcyk, M. and Tiedje, T. et al. 2005. "Molecular Beam Epitaxy Growth of GaAsl.Bi." Appl. Phys. Lett. 82 (14): 2245-7.
  • 9Chine, Z. et al. 2010. "Photoreflectance and Photoluminescence Study of Annealing Effects on GaAsBi Layers Grown by Metalorganic Vapour Phase Epitaxy." Semicond. Sci. Technol. 25: 065009.
  • 10Zhang, Y., Mascarenhas, A. and Wang, L. W. 2005. "Similar and Dissimilar Aspects of IlI-V Semiconductors Containing Bi versus N." Phys. Rev. B 71: 155201.

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