2.4GHz逆F类GaN HEMT功率放大器的实现

Realization of 2.4GHz Inverse Class-F GaN HEMT PA

提出了一种高效率逆F类Ga N HEMT功率放大器设计方法,给出了Ga N HEMT大信号优化模型,并基于负载牵引、源牵引和谐波负载牵引下进行仿真,得到了晶体管最大输出功率和最大效率下的最佳输入和输出阻抗。测试表明:2.4GHz下PAE为77%,输出功率为12W。

A method for designing a highly efficient inverse class-F GaN HEMT PA is presented in this paper,which gives large signal optimization modeling of GaN HEMT. The best input and output impedance is obtained based on load pull and source pull and harmonic load pull simulation at the biggest Pout and the biggest PAE. The circuit is optimized at the wideband. The PA shows： At 2. 4GHz,PAE is 77%,Pout is 12 W.