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Exploiting write power asymmetry to improve phase change memory system performance

Exploiting write power asymmetry to improve phase change memory system performance
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摘要 Phase change memory (PCM) is a promising can- didate to replace DRAM as main memory, thanks to its bet- ter scalability and lower static power than DRAM. However, PCM also presents a few drawbacks, such as long write la- tency and high write power. Moreover, the write commands parallelism of PCM is restricted by instantaneous power con- straints, which degrades write bandwidth and overall perfor- mance. The write power of PCM is asymmetric: writing a zero consumes more power than writing a one. In this paper, we propose a new scheduling policy, write power asymme- try scheduling (WPAS), that exploits the asymmetry of write power. WPAS improves write commands parallelism of PCM memory without violating power constraint. The evaluation results show that WPAS can improve performance by up to 35.5%, and 18.5% on average. The effective read latency can be reduced by up to 33.0%, and 17.1% on average. Phase change memory (PCM) is a promising can- didate to replace DRAM as main memory, thanks to its bet- ter scalability and lower static power than DRAM. However, PCM also presents a few drawbacks, such as long write la- tency and high write power. Moreover, the write commands parallelism of PCM is restricted by instantaneous power con- straints, which degrades write bandwidth and overall perfor- mance. The write power of PCM is asymmetric: writing a zero consumes more power than writing a one. In this paper, we propose a new scheduling policy, write power asymme- try scheduling (WPAS), that exploits the asymmetry of write power. WPAS improves write commands parallelism of PCM memory without violating power constraint. The evaluation results show that WPAS can improve performance by up to 35.5%, and 18.5% on average. The effective read latency can be reduced by up to 33.0%, and 17.1% on average.
出处 《Frontiers of Computer Science》 SCIE EI CSCD 2015年第4期566-575,共10页 中国计算机科学前沿(英文版)
关键词 phase change memory write power asymmetry command scheduling phase change memory, write power asymmetry,command scheduling
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  • 1Lefurgy C, Rajamani K, Rawson F, Felter W, Kistler M, Keller T W. Energy management for commercial servers. IEEE Computer, 2003, 36(12): 39-48.
  • 2Lim K, Ranganathan E Chang J, Patel C, Mudge T, Reinhardt S. Understanding and designing new server architectures for emerging warehouse-computing environments. In: Proceedings of 35th Interna- tional Symposium on Computer Architecture. 2008, 315-326.
  • 3Udipi A N, Muralimanohar N C, Niladrish B, Rajeev D, A1 J, Norman P. Rethinking DRAM design and organization for energy-constrained multi-cores. SIGARCH Computer Architecture News, 2010, 38(3): 175-186.
  • 4Lee B C, Ipek E, Mutlu O, Burger D. Architecting phase change mem- ory as a scalable dram alternative. SIGARCH Computer Architecture News, 2009, 37(3): 2-13.
  • 5Hay A, Strauss K, Sherwood T, Loh G H, Burger D. Preventing PCM banks from seizing too much power. In: Proceedings of the 44th An- nual International Symposium on Microarchitecture. 2011, 186-195.
  • 6Yue J, Zhu Y. Exploiting subarrays inside a bank to improve phase change memory performance. In: Proceedings of Design, Automation Test in Europe Conference Exhibition. 2013, 386-391.
  • 7NJ J, Hu W, Li G, Tan K, Sun D. Bp-tree: a predictive B+-tree for re- ducing writes on phase change memory. IEEE Transaction on Knowl- edge and Data Engineering, 2014, 26(10): 2368-2381.
  • 8Qureshi M K, Franceschini M M, Jagmohan A, Lastras L A. PreSET: improving performance of phase change memories by exploiting asym- metry in write times. In: Proceedings of the 39th Annual International Symposium on Computer Architecture. 2012, 380-391.
  • 9Yang B, Lee D, Kim J, Cho J, Lee J, Yu S Y, Gon B. A low power phase-change random access memory using a data-comparison write scheme. In: Proceedings of International Symposium on Circuits and Systems. 2007, 3014-3017.
  • 10Yamada N O, Eiji N, Kenichi A. Nobuo T, Masatoshi. Rapid phase transitions of GeTeSb2Te3 pseudobinary amorphous thin films for an optical disk memory. Journal of Applied Physics, 1991, 69(5): 2849- 2856.

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