摘要
Ⅴ族元素As在碲镉汞中具有较小的扩散系数,在非本征p型掺杂中得到广泛应用,在p-on-n型高性能探测器及双色或多色探测器应用方面优势明显。对分子束外延掺As碲镉汞薄膜的几种生长技术的基本原理进行了简单介绍,并对各方法存在的优缺点进行了对比分析;同时对As杂质在碲镉汞材料中的掺杂形态、杂质激活退火工艺及杂质激活率等进行了总结分析。对MBE As掺杂在第三代多层膜结构器件的应用方面提出了建议。
The group V element arsenic is applied widely in extrinsic p-type doping Hg Cd Te for its low diffusion coefficient, and it has obvious superiority on the application of p-on-n high performance detectors and dual-band or multi-band detectors. This paper introduced the basic theory of As-doped Hg Cd Te thin film growth techniques by MBE, as well as the advantages and disadvantages of each were compared. It also analyzed the impurity doping form, the annealing technique of impurity activation and the activation rate. The suggestion has been proposed, which is about application in the third generation device that demonstrates a multilayer with As-doped by MBE.
出处
《红外技术》
CSCD
北大核心
2015年第10期858-863,共6页
Infrared Technology
基金
核高基项目
