摘要
采用批量采样减小其他因素对实验结果影响的实验设计,比较分别采用冶金法与西门子法硅片制造的太阳电池主要电性能参数。结果表明:在标准测试条件和转换效率基本一致时,冶金法晶硅电池V_(oc)优于西门子法晶硅电池4 m V,I_(sc)低42 m A,R_s低0.119 mΩ,R_(sh)与I_(rev)增加一倍。
The electrical performance parameters of crystalline silicon solar cell with wafers purified by Siemens process （SP） and physical metallurgy process （MG） , respectively, were compared by batch sample designed experiment to lessen other factors＇ influence. The results indicate that the Voc of MG＇ s solar cell is 4 mV higher than that of the SP＇ s, yet the Lo is 42 mA lower, Rs is 0.119 mΩ lower, R,h and Irev almost double.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2015年第10期2325-2328,共4页
Acta Energiae Solaris Sinica
关键词
冶金法
西门子法
晶硅电池
电性能
physical metallurgy process
Siemens process
crystalline silicon solar cell
electrical performance
