氧分压对直流磁控溅射IGZO薄膜特性的影响

Synthesis and Properties of Amorphous Indium-Gallium-Zinc-Oxides Thin Films by DC Reactive Magnetron Sputtering

在室温下,利用直流磁控反应溅射法分别在硅片和石英玻璃上制备IGZO薄膜。通过控制溅射时氧分压的不同,研究其制备IGZO薄膜的微结构、表面形貌及其元素结合能及电学与光学特性。结果表明,在不同的氧分压下,薄膜始终保持稳定的非晶结构,并且在可见光区域的透光率超过80%。随着氧分压的增加,薄膜的表面粗糙度增加,沉积速率下降。通过X射线光电子谱分析随氧分压的增大,氧空位的增加,从而引起薄膜的电阻率增大,光学禁带宽度逐渐由3.58减小到3.50e V。氧分压是磁控溅射IGZO薄膜的关键因素。

The amorphous indium-gallium-zinc-oxides（ a-IGZO） thin films were deposited on substrates of nSi（ 100） and quartz glass by DC reactive magnetron sputtering at room temperature. The effect of the growth conditions,including but not limited to the oxygen partial pressure,oxides＇ mole ratio and sputtering time,on the microstructures and properties of a-IGZO coatings were investigated with X-ray diffraction,X-ray photoelectron spectroscopy and atomic force microscopy. The results show that the oxygen partial pressure significantly affected the microstructures and properties of a-IGZO coatings. To be specific,stable a-IGZO coatings with a transmittance of 80% in visible range were easily grown. As the oxygen partial pressure increased,the band-gap of the a-IGZO coatings on glass substrate decreased from 3. 58 e V to 3. 50 e V,accompanied by a decrease of deposition rate and increases of the surface roughness and resistivity,possibly because of an increase of O-vacancy.