共蒸发法制备Cu_2ZnSnS_4薄膜的研究

Synthesis and Characterization of Cu_2ZnSnS_4 Thin Films by Co-Evaporation and Sulfurization

利用真空蒸镀技术共蒸发Cu,Zn,Sn金属丝在玻璃衬底上制备前驱体Cu-Zn-Sn(CZT),并采用高温硫化金属前驱体的方法制备Cu2Zn Sn S4(CZTS)薄膜。本文采用X射线衍射和扫描电子显微镜对薄膜进行表征,探究前驱体的蒸镀条件以及硫化温度对薄膜生长情况的影响,结果表明:溅射Mo作为缓冲层有利于Zn原子的沉积;硫化温度为500℃时,薄膜的结晶度较好,能够生成单一的CZTS薄膜;气压越低越有利于形成优质薄膜;衬底温度升高为220℃时,薄膜的结晶度有所提高,有利于抑制杂质的生成;等离子体的辅助可以提高薄膜的结晶质量。

The Cu2 Zn Sn S4（ CZTS） thin films were deposited by co-evaporation of Cu,Zn and Sn on the glass substrate pre-sputtered with Mo-transition layer,followed by high temperature sulfurization in N2 atmosphere. The influence of the deposition conditions,including but not limited to the Mo transition layer,plasma enhancement and pressure and substrate temperature in metals deposition,and sulfurization temperature,on the microstructures of the Cu2 Zn Sn S4 coatings was investigated with X-ray diffraction and scanning electron microscopy. The results show that high quality Cu2 Zn Sn S4 coatings can be deposited under the optimized conditions. To be specific,the Mo-transition layer decreased the loss of Zn,originated from its weak interfacial adhesion; an increase of sulfurization temperature improved crystallinity. Grown at 220 o C,1. 5 × 10- 2Pa,assisted with plasma,and sulfurized at 500℃,highly crystallized Cu2 Zn Sn S4 coatings with fewer impurities were synthesized.