一种与红外控温互补的温度控制系统

A Temperature Control System Complementary with the Infrared Temperature Control

针对人工晶体生长温度控制系统,提出一种基于直流可编程电子负载控制加热功率的方 法控制温度,补充现有温度控制方法在晶体生长低温段（0-800 ℃）的缺陷.根据多次应用在蓝宝 石晶体生长实验的结果,系统在实验中控制的升温段和降温段（室温至1 900 ℃）温度与功率曲线 均稳定,与红外控温方式在晶体生长工艺中形成良好的互补.该方法具有良好的便捷性、稳定性和 较低廉的成本.

Analyzing the existing artificial crystal growth temperature control system,we present a programmable DC electronic load control heating power-based approach to control the temperature. The temperature control methods are to supplement defects of the existing methods in the low-temperature crystal growth segments( 0 ~ 800 ℃). According to the applications in sapphire crystal growth experiments,the curve of the system controlling the temperature and power is stable in heating or cooling period. The method has good convenience,stability and relatively low cost.