取样结构λ/8 DFB半导体激光器特性研究

Characteristics of λ/8 DFB semiconductor laser based on sampling structure

研究了基于取样光栅结构的λ/8相移DFB半导体激光器的调制特性。实验结果表明,λ/8 DFB半导体激光器单模特性良好,边模抑制比在45d B以上。在70m A的注入电流情况下,激光器的调制带宽达到16GHz,其无杂散动态范围也达到87d B/Hz2/3。

In the paper, the modulation characteristics of λ/8 phase-shifted DFB semiconductor laser based on the sampling grating structure. Experimental results show that the single longitudinal mode（SLM） property of the proposed DFB semiconductor laser is ensured with side mode suppression ratio （SMSR） of more than 45613. The modulation bandwidth can reach up to 16GHz with the measured spurious-free dynamic range（SF- DR） of 87dB/Hzz3 at the injection current of 70mA.