摘要
将不同结构的抑弧层使用在相同熔断器基片上,研究了不同结构对熔断器高压电弧猝灭效果的影响。结果表明:熔断器动作时高压电弧的猝灭与抑弧层结构密切相关,多孔的抑弧层结构更有利于电弧的及时猝灭,对抑弧层中孔洞结构进行优化后熔断器电弧猝灭时间能够缩短至3 ms以内,电弧猝灭后的绝缘电阻大于500 M?,能达到较好的切断电流的目的。
Arc-quenching properties of high voltage fuses with different structures of arc-quenching layer were investigated. The results show that the quenching effect of high voltage electrical arc is closely related to the structure of arc-quenching layer, the porous structure is more preferred in the arc-quenching layer. After the optimization of the porous structure, the arc-quenching time could be decreased to less than 3 ms, the insulation resistance is greater than 500 MΩ after open circuit for the fuse.
出处
《电子元件与材料》
CAS
CSCD
2015年第11期89-91,共3页
Electronic Components And Materials
基金
贵州省科学技术基金资助项目(No.[2013]2302)
关键词
熔断器
抑弧层
抑弧性能
过流保护
SMD
多孔材料
fuse
arc-quenching layer
arc-quenching property
over-current protection
SMD
porous material