摘要
To grow high-quality and large-size monocrystalline silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.
To grow high-quality and large-size monocrystalline silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges-- polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal--needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.
基金
partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy,Trade and Industry (METI),Japan
关键词
单晶硅太阳能电池
铸造技术
大尺寸
低成本
单粒
数值分析
位错增殖
操作条件
single-seed casting, monocrystalline silicon,polycrystalline nucleation, dislocation multiplication, multicrystalline silicon
