期刊文献+

一种新型的用于红外灵敏探测的低背景光谱仪(英文)

Design of a novel low-background spectrometer for infrared sensitive detection
下载PDF
导出
摘要 提出了一种新型的基于反射光栅干涉仪的低背景光谱仪,当使用工作在背景限制条件下的探测器时,降低背景噪声,有利于提高光谱仪系统的探测率,进而可提高光谱仪的信噪比.由于理想反射镜发射率为零,故其干涉仪组件无黑体辐射.因此,基于低温光源、低温探测器和光栅干涉仪的光谱仪,其探测到的背景辐射大幅降低.进而得到低背景下的探测率实现灵敏探测.理论分析表明随背景辐射的降低,背景限制条件下探测器的探测率可大幅提高.理想情况下,对工作在背景限制下的碲镉汞探测器,当由300 K的背景辐射降至77 K时,其探测率和相应光谱仪的信噪比可提高三个数量级.另外,与之前报导的低温迈克尔逊光谱仪相比,它结构紧凑且无需对干涉仪降温,易于搭建.该设计对红外灵敏探测有重要意义. The design of a novel low-background spectrometer based on lamellar grating interferometer( LGI) is presented. Reducing background noise helps to improve the spectrometer system detectivity for detectors operating under background limited performance( BLIP) regime,and then improve the signal to noise ratio( SNR) of spectrometer. The principle is that perfect mirrors do not emit blackbody radiation since their emissivity equals zer0.Therefore,a lamellar grating interferometer based on a"cold"source and a"cold"detector becomes an extremely sensitive instrument because of the reduction of background radiation. Theoretical analysis show s that the system detectivity can be improved substantially w ith background radiation dropping. In ideal case,for a typical Hg CdT e detector,the real BLIP detectivity obtained and corresponding SNR can be improved by three orders of magnitudes w hen background radiation is reduced from 300 K to 77 K. Besides,w ithout cooling the interferometer,this configuration is more compact and easier-to-build compared w ith previously reported low-background M ichelson spectrometer. This design has important significance for infrared sensitive detection.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2015年第5期533-537,共5页 Journal of Infrared and Millimeter Waves
基金 Supported by National High-tech R&D Program of China 863 Program(2011AA010205) National Natural Science Foundation(91221201,61234005,and 11074167) the Special Foundation for State Major Basic Research Program of China(2011CB925603)
关键词 发射率 背景辐射 光栅干涉仪 探测率 信噪比 emissivity background radiation lamellar grating interferometer detectivity SNR
  • 相关文献

参考文献18

  • 1Griffiths P R, de Haseth J A. Fourier Transform Infrared Spectrometry[M]. New York: John Wily & Sons, 2006,161 - 175.
  • 2Rogalski A. Infrared detectors : an overview [J]. Infrared Physics &Technology, 2002, 43(3) : 187 -210.
  • 3Yang Y, Liu H C, Hao M R, ei al. Investigation on the limit of weakinfrared photodetection [ J ]. Journal of Applied Physics, 2011, 110.7): 074501 -074506.'.
  • 4Griffiths P R, de Haseth J A. Fourier Transform Infrared Spectrometry[M ]. New York : John Wily & Sons,2006,97 - 142.
  • 5Moehlmann J G, Gieaves J T, Hudgens J W, ef al. Infrared chemilu-minescence studies of the reaction of fluorine atoms with monosubstitut-ed ethylene compounds [ J]. The Journal of Chemical Physics, 1974,60(12) : 4790-4799.
  • 6John S,Vanasse G A. Lamellar Grating Far-Infrared Interferomer[J]. J Opt SocAm, 1960,50:113 -118.
  • 7Manzardo 0,Michaely R, Schadelin F,et al. Miniature lamellar grat-ing interferometer based on silicon technology [ J ]. Optics Letters,2004’ 29(13): 1437 -1439.
  • 8Lee F,Zhou G, Yu H, et al. A MEMS-based resonant-scanning la-mellar grating Fourier transform micro-spectrometer with laser referencesystem [ J], Sensors and Actuators A : Physical,2009,149(2) : 221 -228.
  • 9Merenda F, Buhler S, Farah H, et al. Portable NIR/MIR Fourier-transform spectrometer based on a common path lamellar grating inter-ferometer. Next-Generation Spectroscopic Technologies III, 2010[C]. Orlando Florida: [s.n. ],2010,7680: 76800V-76800V-12.
  • 10Heribert E,Mira N,John R F. A simple interferometer for the charac-terization of sources at terahertz frequencies [ J]. Measurement Scienceand Technology, 2007 , 18(8) : 2623.

二级参考文献26

  • 1Glenn T Hess, Thomas J Sanders. HgCdTe double layer heterojuction detector device [J]. SPIE, 2000, 4028:353-364
  • 2Wenus J, Rutkowski, Rogalski A. Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes [J].SPIE, 2001, 4288:335-344
  • 3Antoni Rogalski. Heterostructure HgCdTe photovoltaic detectors[J]. SPIE, 2001, 4355:1-14
  • 4Rogalski A. Photovoltaic Detector in Infrared Photon Detectors [M]. USA: Washington, SPIE Optical Engineering Press, 1996, chap. 3
  • 5Nemirovsky Y, Rosenfeld D, Adar R, et al. Tunneling and dark currents in HgCdTe photodiodes [J]. J. Vac. Sci.Technol. , 1989, A7(2): 528-535
  • 6Kinch M A, Willardson R K, Beer A C. Metal Insulator Semiconductor Detectors in Semiconductors and Semimetals[M]. New York: Academic Press, 1981, 18(6)
  • 7David Rosenfeld, Gad Bahir. A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n + -p HgCdTe photodiodes [J]. IEEE Transactions on Electron Devices, 1992, 39(7): 1638-1645
  • 8Dhar V, Ashokan R, Khan Z A D, et al. Analysis of the R0A product in n+ and n+-n-p Hg1-x CdxTe photodiodes[J]. Semicond. Sci. Technol. , 1996, 11:1077-1084
  • 9Adar R. Spatial integration of direct band-to-band tunneling currents in general device structures[J]. IEEE Transactions on Electron Devices, 1992, 39(4): 976-981
  • 10Dewames R E, Williams G M, Pasko J G, et al. Current generation mechanisms in small band Gap HgCdTe-p-n junctions fabricated by ion implantation [ J ]. Journal of Crystal Growth, 1988, 86:849-858

共引文献25

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部