蓝宝石晶片研磨工艺的研究

Study on the Grinding Technique for Sapphire Wafer

利用碳化硼W5对蓝宝石研磨实验进行研究,得出不同磨料浓度、不同悬浮液黏度和加工压力对表面状态、粗糙程度和工件去除率的影响。结果表明,碳化硼W5比较适宜研磨,用此磨料在浓度为15%,悬浮液黏度为0.15%(黏度通过控制羧甲基纤维素的衍生物的含量控制),研磨压力为4 N/cm2时效果较佳,去除率可达0.63μm/min,表面无划痕,粗糙度较理想。

The grinding experiment of sapphine wafer by using boron carbide W5 was studied. Effect of abrasive concentration, suspension viscosity and surface processing pressure on the surface state, roughness and removal rate was investigated. The results show that, boron carbide W5 is appropriate for grinding; when the abrasive concentration is 15%, the viscosity of the suspension is 0.15%, and the pressure is 4 N/cm2, the removal rate can reach to 0.63μm/min, and the roughness of surface is ideal.