基于直流-交变电场的单晶硅3D微纳结构制备方法研究

Study on Fabrication Method of Silicon 3D Micro-Nanostructure Based on Direct-alternating Electric Field

贵金属颗粒辅助化学腐蚀法在制备硅微纳线结构方面具有独特的作用。为了自动控制贵金属颗粒在单晶硅体内的运动方向,提高制备复杂3D硅微纳结构的可能性和结构品质,提出一种基于复合电场的单晶硅3D微纳结构制备方法。设计了直流-交变复合电场模型来研究贵金属颗粒辅助化学腐蚀法的机理,并分析了电场频率对单晶硅微纳结构的影响。设计了外电场控制模型及试验,讨论了电场强度和电场方向对腐蚀效率和腐蚀轨迹的作用规律。微结构观测结果验证了利用电场控制腐蚀加工过程的可行性,得到了优化的电场电流密度和电场频率工作区间,为制备3D硅微纳结构提供了新的试验思路和机理分析途径。

MaCE of silicon （Si） has a superiority and irreplaceable advantages to iabrlcate 51 micro＆nanostructures. In order to simplify technological process of controlling etching direction and fabricate Si 3D micro＆nanostructures, a new method of fabricating silicon micro＆nanostructures was presented by using direct-alternating electric field to control the etching direction. A direct-alternating electric field control model was formulated to study the mechanism of MaCE in the electric field, and the effects of different frequencies of electric field on the Si micro＆nanostructures were discussed. An external electric field control model and an experiment were designed to study the action law of electric field intensity and direction on etching effienciency and direction.The results of micro-structure inspec- tion demonstrate that electric field can effectively control etching direction and has the ability to fabri- cate Si 3D micro＆nanostructures. Optimizations of the electric current density and electric field fre- quency range were obtained,and a new method was provided for experiments and mechanism analysis.