ZnO透明导电薄膜制备及紫外辐照处理特性研究

Hydrothermal Growth and Subsequent UV Treatment for Transparent Conductive ZnO Films

ZnO作为一种典型的透明导电氧化物(Transparent conductive oxide,TCO)材料,具有同氧化铟锡(Indium tin oxide,ITO)相比拟的光电性能,其原料丰富、绿色环保、易于制备、生成成本低等优点使ZnO成为最有希望替代ITO的材料。本文以玻璃为衬底,利用量子点种子层作为缓冲层,采用传统水热方法制备了低成本ZnO透明导电薄膜,采用特殊的紫外光辐照工艺对薄膜进行后处理,探索薄膜生长参数和紫外光辐照处理工艺对其透光率和导电性的影响。结果表明,紫外辐照处理不影响薄膜的透光性能,而使材料的方块电阻降低3个数量级,数值从没处理时的1.5×105Ω/□降低到150Ω/□,极大地提高了薄膜的电导率,为ZnO薄膜材料电导率的提高提供了一个简单高效的途径。

As a typical transparent conductive oxide（TCO）material,ZnO not only has similar optical and electrical properties with indium tin oxide（ITO）,but also has other advantages such as abundant in serves,friendly environment,easy preparation,and low cost,etc.Therefore it is the promising material to replace ITO.In this paper,the transparent conductive film of ZnO is prepared by the traditional hydrothermal method.In this process,the quantum dot seed layer is used as the buffer layer on the glass substrates.The effect of film growth parameters and ultraviolet vays（UV）irradiation treatment on the transmittance and conductivity of the film is explored.The results show that,after UV treatment,the electric resistivity of the ZnO nanostructure film is improved by three orders of magnitude,from 1.5×105Ω/□to 150Ω/□,which provides a simple and efficient way to improve the conductivity of ZnO thin films,and other metal oxides.