多孔氧化镍膜的制备及其赝电容性能

Fabrication of porous nickel oxide films and their pseudocapacitive performance

为了进一步提高氧化镍的赝电容性能,制备了多孔氧化镍膜。采用合金-去合金法,通过电沉积锌、热处理、碱液除锌等步骤,分别在光亮镍基体和泡沫镍基体表面制备多孔氧化镍膜,研究了热处理温度对多孔氧化镍膜形貌和电化学性能的影响。实验结果表明,可以通过改变热处理温度来调控多孔氧化镍膜的孔径大小和孔密度分布。350℃热处理条件下制得的多孔氧化镍膜孔径较大,且孔分布均匀;与在其他热处理温度制得的样品相比,350℃热处理条件下制得的多孔氧化镍膜具有较大的比容量、较好的速率性能和较高的电化学循环稳定性。

Porous nickel oxide films were synthesized for better pseudocapacitive performance.Porous nickel oxide films were fabricated via a facile alloy-dealloy method.Through electrodeposition of Zn film on Ni substrate,heat treatment and dealloying in alkaline solution,porous nickel oxide films could be formed on the smooth nickel substrate and nickel foam.The effects of heat treatment on the morphology and electrochemical properties of the porous nickel oxide film were investigated.The results show that the diameter and density of the pores can be tuned by changing the temperature of the heat treatment.The porous nickel oxide film with larger pore size and uniform pore distribution has been obtained by annealing at 350 ℃.Moreover,the sample obtained by annealing at 350 ℃ shows larger specific capacitance,better rate capability and higher cycle stability.