石墨烯掺杂研究进展

Research Progress of Graphene Doping

石墨烯被认为是在后摩尔时代可能取代硅成为构筑集成电路的主要材料,近年来成为研究热点。然而要使石墨烯在电路中得到实际应用,其稳定、可控的掺杂至关重要。按照不同掺杂机理梳理了近年来关于掺杂石墨烯的研究,分析了表面转移掺杂和替位掺杂两种主流掺杂方法的掺杂机制,比较了不同掺杂方法的优势与劣势,并提出了潜在的应用方向。由于简单表面转移掺杂和替位掺杂方法都使石墨烯掺杂后裸露在外界环境中,很容易受外界吸附物的影响,造成掺杂效果的退化,因此介绍了氮化硅钝化层和金属接触在石墨烯掺杂方面的独特优势,并且认为掺杂后隔绝石墨烯与外界环境是掺杂稳定存在的必要前提。最后,展望了掺杂石墨烯在未来电子器件中的应用。

Graphene is considered as the potential constituent material of Si in the integrated circuit in the More-than-Moore era,therefore it has become a research focus in recent years.To realize the practical application in the integrated circuit,the stable and controllable graphene doping is vital for the graphene integrated circuit.Recent researches of graphene doping according to different doping mechanisms are summarized.The mechanisms of the surface transfer doping and substitution doping are analyzed,their relative advantages and disadvantages are compared and potential applications are proposed.But graphene is still exposed to the external environment after the simple surface transfer doping and substitution doping,and the degeneration of the doping effect is easily caused by the absorbed substances in the external environment.Therefore the unique advantages of the silicon nitride passivation and metal contact in graphene doping are introduced,and it is proposed that the isolation of the graphene from the external environment after doping to maintain stable doping effects is critical.Finally,application prospects of the doped graphene in future electronic devices are proposed.