摘要
为实现TSV硅衬底表面铜去除速率的优化,对影响TSV铜去除速率的最主要因素抛光液组分(如磨料、螯合剂、活性剂和氧化剂)中的氧化剂进行分析。通过对不同体积分数的氧化剂电化学实验进行钝化机理的研究,从而得到最佳的氧化剂体积分数,再进行铜的静态腐蚀实验和抛光实验对铜的去除速率进行验证。实验结果表明,氧化剂体积分数为0.5%时铜具有较高的去除速率,能够满足工业需要。最后,对CMP过程机理和钝化机理进行分析,进一步验证了氧化剂在TSV铜化学机械平坦化中的作用。
For the optimization of the through silicon via（TSV）Si substrate surface removal rate of copper,the oxidation agent as one of the main impact factors on the TSV copper removal rate,i.e.the components of the polishing fluid（such as the abrasive,chelating agent,active agent and oxidant）was analyzed.The electrochemical experiments of the passivation mechanism research were carried out with the oxidant agents of different volume fractions to obtain the optimum oxidant agent volume fraction.And then the copper removal rate was verified through the copper static corrosion and polishing experiments.The experimental results show that copper has a higher removal rate for the oxidant with the volume fraction of 0.5%,satisfying the requirements of the industry.Finally,the CMP process mechanism and passivation mechanism were analyzed,and the effect of the oxidation agent in the process of TSV copper chemical mechanical was further verified.
出处
《微纳电子技术》
CAS
北大核心
2015年第11期737-740,共4页
Micronanoelectronic Technology
基金
国家中长期科技发展规划02科技重大专项(2009ZX02308)
河北省青年自然科学基金资助项目(F2015202267)
河北省教育厅项目(QN2014208)
关键词
去除速率
硅通孔化学机械抛光(TSV
CMP)
开路电位
静态腐蚀电位
钝化作用
氧化剂
removal rate
through silicon via chemical mechanical polishing（TSV CMP）
open circuit potential
static corrosion potential
passivation
oxidant
