摘要
忆阻器是除电阻器、电容器和电感器之外的第四种基本无源二端非线性器件,具有记忆功能。采用电流控制传输器、集成运放、模拟乘法器、电阻和电容等基本器件,导出了基于阻抗变换的浮地忆阻器模型电路。采用忆阻器线性漂移模型,利用软件NI Multisim12.0,仿真分析了荷控浮地忆阻器及磁控浮地忆阻器电路的伏安特性。结果表明,浮地忆阻器的伏安关系与Ti O2忆阻器模型的定义一致,正弦激励信号激励下端口特性展现出典型的非线性磁滞回线特性。证明了基于电流控制传输器的忆阻器电路可用于实际的电路,具有通用性。
Memristor which is a nonlinear device with memory ability,is the fourth fundamental two-terminal circuit element besides the resistor,capacitor and inductor.In this paper,a floating ground memristor emulator which is based on the current controlled conveyor, the integrated operational amplifier, the analog multiplier and the other fundamental devices,is presented by using the impedance conversion.By using the linear drift model of memristor and the software of NI Multisim12.0,the voltage-current characteristic of charge controlled and magnetic flux controlled floating ground memristor model is described and analyzed.The research results demonstrate that the floating ground memristor is a frequency-dependent pinched loop,like an inclined number"8", which is consistent with the characteristic of TiO2 memristor device.All the results manifest that the memristor based on current controlled conveyor is an universal emulator and can be applied to the analog circuit design.
出处
《杭州电子科技大学学报(自然科学版)》
2015年第5期12-17,共6页
Journal of Hangzhou Dianzi University:Natural Sciences
基金
浙江省自然科学基金资助项目(LQ14F010009)
关键词
电流控制传输器
浮地忆阻器
通用模型
伏安特性
current controlled conveyor
floating ground memristor
universal emulator
voltage-current charac-teristic