摘要
分析了忆阻器与忆容器之间的关系,提出了基于电压控制型忆阻器的忆容器模型.用Pspice软件对该模型进行了仿真实验,发现该模型中忆容器的忆容值与忆阻器的忆阻值成线性关系,忆容器的电压—电荷曲线呈现典型的非线性迟滞回线特性.在验证了所提出忆容器模型正确性的基础上,进一步分析了忆容器的电气特性.
In this paper,a model for transferring a voltage-controlled memristor into memcapacitor is described,of which the realization is on the basis of an analysis of the relationship between memristor and memcapacitor.Results of Pspice simulation indicate that：in the model the relationship between memristance and memcapacitance is linear,and the v-q characteristic of the memcapacitor is a typically non-linear pinched hysteretic loop.After conforming the correctness of the model,a further Pspice simulation is conducted in order to analyze and observe the characteristics of memcapactor.
出处
《微电子学与计算机》
CSCD
北大核心
2015年第11期166-171,共6页
Microelectronics & Computer
