摘要
采用单片微波集成电路（MMIC）芯片技术和多芯片组件（MCM）微组装工艺,设计了一款小尺寸双通道发射接收（T/R）组件。组件由环形器、限幅器芯片、低噪声放大器（LNA）芯片、幅相控制多功能芯片、驱动放大器芯片和功率放大器芯片（PA）等部分构成。基于Ga As的LNA MMIC芯片具有更低噪声系数,基于Ga N的PA MMIC芯片具有更高的输出功率及功率附加效率。组件接收通道采用基于Ga As的LNA芯片,发射通道采用基于Ga N的PA芯片,设计了针对发射通道驱动放大器与功率放大器的协同脉冲调制电路。研制的T/R组件在8~12 GHz的频带内：接收通道在工作电压＋5 V连续波的条件下,小信号增益大于20 d B,噪声小于3 d B;发射通道在周期1 ms,脉宽10%的调制脉冲条件下,脉冲发射功率大于46 d Bm。T/R组件外形尺寸为70 mm×46 mm×15 mm。
Based on monolithic microwave integrated circuit（ MMIC） technology and multichip module（ MCM） packing technics, a kind of the miniaturized T/R module with two channels was presented. The module is composed of the circulator,limiter chip,low noise amplifier（ LNA）,amplitude and phase control multifunction chip,drive amplifier chip,power amplifier（ PA）. The low noise amplifier based on Ga As MMIC technology has lower nosie figure,the power amplifier based on Ga N MMIC has higher output power and higher power added efficiency. Therefore, the T/R module uses Ga As LNAs in the receiver channel and Ga N PAs in the transmitter channel. A high voltage pulse modulate circuit was designed for the drive amplifier and power amplifier. Within the bandwidth of the 8-12 GHz,the results show that the gain of the receiver channel is larger than 20 d B,the noise figure is lower than 3 d B under the ＋5 V continue wave condition. The output of the transmitter channel power is more than 46 d Bm under the pulse wave condition（ period is 1 ms,pulse duration ratio is 10%）. The size of the T/R module is 70 mm×46 mm×15 mm.
出处
《半导体技术》
CAS
CSCD
北大核心
2015年第11期810-814,共5页
Semiconductor Technology
