卡盘转速及喷淋臂摆动方式对晶片腐蚀性能的影响

Effects of Chuck Rotation Speed and Dispensing Arm Swing Mode on the Etching Properties of Silicon Wafer

随着晶片尺寸的不断增大,精准控制单片湿法腐蚀速率及非均匀性变得越来越具有挑战性。主要研究了300 mm单片湿法腐蚀工艺过程中,喷射稀释氢氟酸时卡盘的旋转速度和喷淋臂摆动方式对晶片表面腐蚀性的影响。结果表明,随着卡盘旋转速度的增大,腐蚀速率从1.02 nm/min线性提高到1.06 nm/min,腐蚀速率的非均匀性先是迅速降低,但当转速高于150 r/min后,基本保持在2.70%。喷淋臂在晶片中心定点喷射、匀速摆动和呈抛物线型摆动时,晶片腐蚀速率都约为1 nm/min,腐蚀速率均沿晶片中心到边缘径向降低,与定点喷射相比,喷淋臂在晶片表面摆动后,腐蚀速率的非均匀性明显降低,且抛物线摆动低于匀速摆动,达到1.48%。

With the increasing of the wafer size,it becomes more and more challenging to control the etching rate and non-uniformity exactly. During the process of 300 mm single wet etching, the effects of chuck rotation speed and arm swing modes during dispensing of dilute hydrogen fluoride on the etching properties of silicon wafer were investigated. The results show that with the increase of the chuck rotation speed,the etching rate linearly increases from 1. 02 nm/min to 1. 06 nm/min,and the non-uniformity of the etching rate first decreases and then becomes stable at 2. 70% when the chuck rotation speed is above 150 r/min. The etching rates are all about 1 nm/min with the arm motion of fixed in middle and swing with the uniform velocity and parabola type,and gradually decrease from center to edge of the silicon wafer. Compared with fixed in middle,the non-uniformity of the etching rate is obviously decreased after the arm swing on the silicon wafer surface,and when the arm swing with parabola type lower than that with uniform velocity,the non-uniformity of the etching rate reaches 1. 48%.