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Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening 被引量：1

Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening
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摘要 A novel 4T-cell based duplication redundancy SRAM is proposed for SEU radiation hardening applications. The memory cell is designed with a 65-nm low leakage process; the operation principle and the SEU radiation hardening mechanism are discussed in detail. The SEE characteristics and failure mechanism are also studied with a 3-D device simulator. The results show that the proposed SRAM structure exhibits high SEU hardening performance with a small cell size. A novel 4T-cell based duplication redundancy SRAM is proposed for SEU radiation hardening applications. The memory cell is designed with a 65-nm low leakage process; the operation principle and the SEU radiation hardening mechanism are discussed in detail. The SEE characteristics and failure mechanism are also studied with a 3-D device simulator. The results show that the proposed SRAM structure exhibits high SEU hardening performance with a small cell size.
作者 洪新红 潘立阳 张文帝 纪冬梅 伍冬 沈忱 许军
机构地区 Institute of Microelectronics Cogenda Co Ltd
出处 《Journal of Semiconductors》 EI CAS CSCD 2015年第11期34-38,共5页 半导体学报（英文版）
关键词 SRAM SEE SEU radiation hardening 3-D simulation SRAM SEE SEU radiation hardening 3-D simulation
分类号 TP333 [自动化与计算机技术—计算机系统结构] Q987.1 [生物学—遗传学]
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参考文献14

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引证文献1

  • 1孙杰杰,王超,李嘉威,姜传鹏,曹凯华,施辉,张有光,赵巍胜.抗辐照MRAM研究进展[J].国防科技大学学报,2023,45(6):174-195.
Journal of Semiconductors
2015年 第11期

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