Al/CuO-SCB含能半导体桥电爆和点火性能初探

Investigation on electro-exploding and ignition performance of Al / Cu O-SCB energetic semiconductor bridge

基于多晶硅薄膜的多层Al/Cu O纳米含能半导体桥(ESCB)理论上具有比多晶硅半导体桥(PSCB)更好的输出性能。该文采用电爆实验探讨了Al/Cu O薄膜对ESCB电爆特性参数的影响,通过高速摄影对比了ESCB和PSCB爆发产物的空间尺寸和持续时间。点火实验时,在点火芯片与药剂之间设置一定距离的空气间隙,研究了不同条件下两种半导体桥的发火感度和发火率。结果表明,与PSCB相比,ESCB爆发产物空间尺寸更大,持续时间更长;在间隙距离为1 mm时,50%发火电压为28.50 V,低于PSCB的32.05 V;间隙距离为2 mm时,10发ESCB全部发火,而PSCB全部未发火。

The energetic semiconductor bridge（ ESCB） based on polysilicon films and Al / Cu O nanoenergetic multilayer films（ n EMFs） should have the better ignition performance than the polysilicon semiconductor bridge（ PSCB） theoretically. The influences of Al / Cu O n EMFs on electro-exploding behaviors of the ESCB are discussed experimentally. The spatial dimensions and durations of burst products of ESCB and PSCB are compared by employing the high-speed camera. By setting gaps between the igniter chip and explosives,the firing sensitivity and the firing rate of the PSCB and the ESCB under different conditions are tested. Results indicate that burst products of the ESCB have the larger spatial dimension and the longer duration than that of the PSCB. When the ignition gap dis-tance is 1 mm,the 50% firing voltage of ESCB is 28. 50 V,lower than that of the PSCB（ 32. 05 V）.When the gap distance is 2 mm,ten ESCB samples are all fired while none of the ten PSCB samples are fired.