摘要
通过MEMS封装试验平台,对键合过程中的键合温度、键合时间等工艺参数以及试验硅片规格进行试验研究。通过改变键合温度、键合时间以及试验硅片规格等参数,进行玻璃-硅键合对比试验。计算每组对比试验的键合空隙率,分析每组对比试验空隙率的数据,归纳总结影响键合质量的因素以及达到键合最佳效果的键合条件。试验结果表明：键合电压为1 200 V,温度为445~455℃,键合时间为60 s时,空隙率小于5%,玻璃与硅片的键合质量达到最佳,为提高玻璃-硅键合质量提供了依据。
Based on the MEMS packaging test platform,the process parameters such as bonding temperature,bonding time and test silicon wafer specifications etc were studied in this paper. Through changing the bonding temperature,bonding time and test silicon wafer specifications etc,the Glass-Si bonding contrast test was made. Through calculating the bonding void fraction of each comparison test. the void fraction data of each group comparison were analyzed and the effect of bonding quality factors was summarized and the optimum effect of bonding temperature was summarized. Experimental results indicate that when the bonding voltage is1200 V,bonding temperature is from 445 ℃ to 455 ℃,the bonding time is 60 s,and the void fraction is less than 5%,bonding quality of glass and silicon wafer can achieve the best,thus providing important basis for the glass silicon bonding quality.
出处
《仪表技术与传感器》
CSCD
北大核心
2015年第10期4-6,共3页
Instrument Technique and Sensor
基金
内蒙古自治区自然科学基金项目(2012MS0730)
中国博士后科学基金项目(2014M551655)
