1015nm半导体激光放大系统的实验研究

Design and Characteristics of Diode Laser Amplifier System at 1015 nm

报道了波长为1015 nm的大功率单频半导体光放大器的设计与研制,实验研究了不同注入光功率和不同温度下,放大器输出光功率与注入电流的依赖关系。结果表明:当波长为1015 nm、功率约为30 m W的种子光注入到半导体激光放大系统中,并把该放大器的注入电流增加到5 A时,其输出的激光功率高达1600 m W,相应的放大倍数可达17.3 d B,且放大器输出功率随温度的降低而增大。此外,还观测了半导体光放大器输出功率的稳定性,发现该放大器可长时间保持稳定工作。因此,该1015 nm激光放大系统可用于掺杂稀土离子晶体的激光冷却,四倍频后还可用于汞原子光钟的实验研究。

The large output power semiconductor optical amplifier with single frequency developed. Output optical power of the amplifier relationship with injection of current is experimentally investigated at different seed laser powers and temperatures. The results of experiments show that the out power with injecting current of 5 A can be up to 1600 mW after injecting the seed laser with power of 30 mW at 1015 nm and the amplification factor is up to 17.3 dB. Moreover, the output power of the amplifier becomes larger as temperature decreases. The output power of semiconductor optical amplifier diode system is very stable once the system reaches thermal equilibrium. Therefore, it can be applied to laser cooling crystals doped with rare earth ions, as well as the optical lattice clock of mercury atoms after frequency quadrupling.