摘要
We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 Ω.mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4HoSiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance Rc of bilayer graphene improves from an average of 0.24Ω·mm to 0. 1 Ωmm. Ohmic contact formation mechanism analysis by Landauer＇s approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density high carrier transmission probability, and p-type doping introduced by contact metal Au.
We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 Ω.mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4HoSiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance Rc of bilayer graphene improves from an average of 0.24Ω·mm to 0. 1 Ωmm. Ohmic contact formation mechanism analysis by Landauer＇s approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density high carrier transmission probability, and p-type doping introduced by contact metal Au.
基金
Supported by the National Natural Science Foundation of China under Grant No 61306006
