期刊文献+

高压强下GaN的结构相变及电子结构的第一性原理研究 被引量:2

First-principles Investigation of Structural Phase Transition and Electronic Structures of GaN Under High Pressure
下载PDF
导出
摘要 基于密度泛函理论的平面波赝势方法,选择广义梯度近似(GGA)下的PBE算法-关联泛函对GaN晶体结构、能带结构以及电子态密度随压强的变化进行了研究,并计算出GaN材料的相变点压强值。研究结果表明:随着压强增加,常见的纤锌矿与闪锌矿GaN会发生结构相变成岩盐矿结构,并且其能带结构均由直接带隙转变成间接带隙。其中,通过焓相等原理得到纤锌矿到岩盐矿结构的相变压强为44.4GPa,而闪锌矿到岩盐矿结构的相变压强为43.6GPa。此外,随着压强增大,GaN纤锌矿、闪锌矿和岩盐矿的价带态密度均向低能方向偏移,而导带态密度向高能方向偏移,从而导致GaN共价性增强及带隙随压强增大而展宽。 This research is based on the plane wave ultra-soft pseudo-potential technology of density function theory. The crystal structure, band structure and electronic state density of GaN under high pressure were investigated by employing associated functional PBE algorithm within generalized gradient approximation (GGA). The pressures of GaN near the point of phase transition also were calculated. The results indicate that with the increase of pressure, GaN in wurtzite and zinc blende structure can convert into rock salt structure under phase transition. Moreover, their band structures transform from direct band gap to indirect band gap. In the enthalpy equal principle, the transition pressure of GaN changes from wurtzite to rock salt phase is 44. 4 GPa, while it is 43.6 GPa for GaN changes from zinc blende to rock salt phase. In addition, with the increase of pressure, the density of states of valence band of GaN in wurtzite, zinc blende and rock salt structures move towards to low engery direction, while conduction band of it to high engery direction. For this reason, the increasing pressure enhances the covalence and increase the band gap of GaN.
出处 《材料导报》 EI CAS CSCD 北大核心 2015年第22期141-144,149,共5页 Materials Reports
基金 国家自然科学基金(10575039) 广东省自然科学基金(S2013010012548)
关键词 第一性原理 GAN 结构相变 电子结构 first-principles, GaN, phase transition, electronic structure
  • 相关文献

参考文献13

  • 1Mohammad S N, Salvador A A, Morkoc H. Emerging gal- lium nitride based devices[J]. Proc IEEE, 1995, 83 (10) : 1306.
  • 2Brown S A, Reeves R J, Haase C S, et al. Reactive-ion- etched gallium nitride: Metastable defects and yellow lumi- nescenee[J]. Appl Phys Lett, I999,75 (21 ) : 3285.
  • 3Serrano J, Rubio A, et al. Theoretical study of the relative stability of structural phases in group-Ill nitrides at high pressures[J]. Phys Rev B,2000,62(24): 16612.
  • 4Perlin P, Jauberthie-Carillon C,Itie J P, et al. Raman scat- tering and X-ray-absorption spectroscopy in gallium nitride under high pressure[J]. Phys Rev B, 1992,45 (1) : 83.
  • 5Veno M, Yoshida M, Onodera A, et al. Stability of the wurtzite-type structure under high pressure: GaN and InN [J]. Phys Rev B,1994,49(1) :14.
  • 6Segall M D, Lindan P J D, Probert M J, et al. First-princi- ples simulation: Ideas, illustrations and the CASTEP code [J]. J Phys:Condensed Matter, 2002,14(11) : 2717.
  • 7张威虎,张富春,张志勇,薛苏琴,杨延宁.压力下纤锌矿ZnS电子结构的第一性原理研究[J].材料导报,2006,20(9):128-130. 被引量:10
  • 8Arbouche O, Belgoumene B, Soudini B, et al. First princi- ples study of the relative stability and the electronic proper- ties of GaN[J]. Comput Mater Sei,2009,47(2):432.
  • 9Lei T, Moustakas T D, Graham R J, et al. Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silieon[J]. J Appl Phys,1992,71(10):4933.
  • 10Anisimov V I, Aryasetiawan F, Lichtenstein A I. First-prin- ciples calculations of the electronic structure and spectra of strongly correlated systems: The LDA+ U method[J]. J Phys Condens Matter, 1997,9(4) : 767.

二级参考文献9

  • 1Karar N, Singh F, Mehta B R, et al. Structure and photoluminescence studies on ZnS : Mn nanoparticles. J Appl Phys, 2004,95(2) : 656
  • 2Regan B O, et al. A low-cast high-efficiency solar cell based on dye-sensitized colloidal Ti20 films. Nature, 1991, 353:737
  • 3Colvin V L, Schlamp M C, Alivisatos A P. Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer. Nature, 1994, 370:354
  • 4Khosravi A A, Deshpande S K, Bhagwat U A,et al. Green luminescence from copper doped zinc sulphide quantum particles. Appl Phys Lett, 1995,67 (18): 2702
  • 5Segall M D, Lindan P J D, Probert M J, et al. First-principles simulation: ideas illustrations and the CASTEP code. J Phys Cond Matt, 2002,14 (11) : 2717
  • 6Yang N X, Ching W Y . Electronic optical and structural properties of some wurtzite crystals. Phys Rev B, 1993,48(7) : 4335
  • 7Schroer P, Kruger P, Pollmann. First-principles calculations of the electronic structure of the wurtzite semiconductors ZnO and ZnS. Phys Rev B,1993, 47:6971
  • 8郭建云,郑广,何开华,陈敬中.Al,Mg掺杂GaN电子结构及光学性质的第一性原理研究[J].物理学报,2008,57(6):3740-3746. 被引量:31
  • 9邢海英,范广涵,赵德刚,何苗,章勇,周天明.Mn掺杂GaN电子结构和光学性质研究[J].物理学报,2008,57(10):6513-6519. 被引量:17

共引文献13

同被引文献18

引证文献2

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部