纳米静态随机存储器质子单粒子多位翻转角度相关性研究

Angular dependence of proton single event multiple-cell upsets in nanometer SRAM

器件特征尺寸的减小带来单粒子多位翻转的急剧增加,对现有加固技术带来了极大挑战.针对90 nm SRAM(static random access memory,静态随机存储器)开展了中高能质子入射角度对单粒子多位翻转影响的试验研究,结果表明随着质子能量的增加,单粒子多位翻转百分比和多样性增加,质子单粒子多位翻转角度效应与质子能量相关.采用一种快速计算质子核反应引起单粒子多位翻转的截面积分算法,以Geant4中Binary Cascade模型作为中高能质子核反应事件发生器,从次级粒子的能量和角度分布出发,揭示了质子与材料核反应产生的次级粒子中,LET(linear energy transfer)最大,射程最长的粒子优先前向发射是引起单粒子多位翻转角度相关性的根本原因.质子能量、临界电荷的大小是影响纳米SRAM器件质子多位翻转角度相关性的关键因素.质子能量越小,多位翻转截面角度增强效应越大;临界电荷的增加将增强质子多位翻转角度效应.

Single event multiple-cell upsets（MCU） increase sharply as the feature size of semiconductor devices shrinks. MCU poses a large challenge on present radiation hardening technology and modeling test technique. Experimental study of the influence of proton incidence angle on single event multiple-cell upsets in 90 nm static random access memory（SRAM）for middle and high energy proton is carried out. The result shows that MCU percentage and multiplicity increase with increasing proton energy, and the MCU topological pattern presents a certain track-orientation characteristic along the trajectories of the incidence ion when the incidence proton is tilted along the X-direction or Y-direction. Single event upset（SEU） cross section has no evident angular dependence. There is some difference in proton MCU cross section between normal incidence and tilt angle incidence only for 30 MeV proton. Angular effect of proton MCU is associated with proton energy. Due to the lower efficiency of Monte-Carlo method in calculating proton MCU, a fast calculation method for cross section, which aims at single event MCU induced by proton nuclear reaction, is adopted. The binary cascade model in Geant 4 toolkit serves as event generators in middle on high proton nuclear reaction. In terms of double differential scattering cross section of secondary particle from proton-material spallation reaction, proton MCU cross section is calculated through integration over the entire space of memory cells array. Based on the distribution of secondary particles, those spallation products with the highest linear energy transfer（LET） and longest range are revealed to emit preferentially in the forward direction, which is the root cause why the angular effect of proton-induced MCU exists. The angular dependence of single event MCU in nanometer SRAM depends strongly on proton energy and critical charge. The higher the proton energy is, the wider the angular distribution of secondary particle is, the greater the energy and LET value of the lateral scattered secondary particle is; and so the angular enhancement effect in MCU cross section for lower energy protons is greater than the higher energy protons. MCU cross section is more isotropic with the increase of the proton energy. Angular effect in MCU cross section becomes stronger with the increase of the critical charge for the same energy proton.