摘要
基于CSMC 0.5 um CMOS工艺设计了一种PSM(Pulse Skip Mode)调制电荷泵DC-DC升压芯片。优化整体结构使能控制最大程度上降低静态功耗,设计能够防止振荡器误操作的时钟逻辑控制电路、宽工作范围低温度系数的带隙基准和衬底最高电位选择电路,分别起到有效抑制纹波紊乱,减小开关切换时流过开关管的脉冲电流、拓宽芯片的工作温度范围和防止闩锁效应,减小芯片面积的作用。仿真结果表明所设计的改进措施使该芯片较传统的2倍升压电荷泵具有更低的稳定纹波、静态功耗和更宽的工作温度范围,进一步提高了升压电荷泵芯片的性能。
A design of PSM （Pulse Skip Mode） boost DC-DC IC base on CSMC 0.5 μm CMOS technology was presented. The circuit＇s overall structure was optimized to greatly reduce the static power. In the study, a clock logic control circuit which can prevent oscillator from accidental gesturing, a wide range low temperature coefficient band gap reference and a substrate maximum potential selector circuit were separately designed to effectively restrain ripple derangement, decrease the pulse current flow through the switching transistor, broaden the IC＇s temperature range, avoid latch up phenomenon and de- crease the chip area. As simulation results indicated, the proposed improvement measures enabled this IC＇s lower steady ripple, lower static power and wider working temperature range compared with traditional voltage doubling charge pumps, thus further improving the performance of boost charge pump chips.
出处
《天津科技》
2015年第11期23-26,28,共5页
Tianjin Science & Technology
关键词
PSM调制
逻辑控制
尖峰脉冲
静态电流
衬底电位
PSM modulation
logic control
pulse peaking
static current
substrate potential
