摘要
分析了载流子迁移率,薄层载流子浓度、饱和电子漂移速度,导带断续,沟道温度等与自热效应的关系,建立了模拟Al Ga N/Ga N高电子迁移率晶体管直流I-V特性的解析模型。仿真结果同试验结果吻合良好,说明了该模型的正确性。
A accurate analytical model of I-V characteristics for AIGaN/GaN high electron mobility transistor（HEMT） is presented considering the relationship between self-heating effect and electron mobility, sheet carrier density, velocity saturation, conduction band discontinuity, and channel temperature. The comparison between simulations and physical calculation shows a good agreement, it is prove that this model is accurate.
出处
《中国新通信》
2015年第23期86-87,共2页
China New Telecommunications
基金
河北省2011年高等学校科学技术研究指导项目(Z2011142)
