摘要
AHfO2/n–In Al As MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in In As/Al Sb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of Hf O2/n–InAlAs MOS-capacitor samples with different Hf O2 thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε ox of Hf O2 layer is enhanced and the In AlAsHfO2 interface trap density Ditis reduced, leading to an effective reduction of the leakage current. It is found that the Hf O2 thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO2/n–InAlAs MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.
AHfO2/n–In Al As MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in In As/Al Sb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of Hf O2/n–InAlAs MOS-capacitor samples with different Hf O2 thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε ox of Hf O2 layer is enhanced and the In AlAsHfO2 interface trap density Ditis reduced, leading to an effective reduction of the leakage current. It is found that the Hf O2 thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO2/n–InAlAs MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.
基金
Project supported by the National Basic Research Program of China(Grant No.2010CB327505)
the Advance Research Foundation of China(Grant No.914xxx803-051xxx111)
