摘要
Owing to the adjustable characteristics and superior etching properties of co-sputtered Nbx Si1-x film, we are trying to fabricate Nb/Nbx Si1-x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable Nbx Si1-x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current–voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed.
Owing to the adjustable characteristics and superior etching properties of co-sputtered Nbx Si1-x film, we are trying to fabricate Nb/Nbx Si1-x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable Nbx Si1-x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current–voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed.
基金
Project supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(Grant No.2011BAK15B00)
the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61401418)
the Basic Research Foundation of National Institute of Metrology of China(Grant No.20-AKY1415)
