摘要
采用高真空直流磁控溅射的方法制备了结构为//Ta(5nm)/Co75Fe25(5nm)/Ir20Mn80(12nm)/Ta(8nm)双层膜,通过X射线衍射(XRD)、原子力显微镜(AFM)和振动样品磁强计(VSM)等分析测试手段,研究了低剂量Ga+离子辐照对双层膜结构和磁性能的影响;通过样品在反向饱和场下停留时间研究了低剂量Ga+离子辐照对双层膜的磁稳定性的影响;并利用SRIM2003软件模拟分析了离子辐照后Ga元素在IrMn层中的深度分布。结果表明,低剂量Ga+离子辐照对双层膜中反铁磁层IrMn的〈111〉方向织构影响甚微;而双层膜的交换偏置场以及界面粗糙度随着Ga+离子辐照剂量的增大而减小;低剂量Ga+离子辐照后双层膜磁稳定性降低。
The CoFe/IrMn bilayer was deposited by high vacuum magnetron sputtering on a silicon wafer substrate.The influences of low dose Ga+ion irradiation on microstructure and magnetic properties were investigated by X-ray diffraction(XRD),atomic force microscopy(AFM)and vibrating sample magnetometry(VSM).And the magnetic stability of both non-irradiated and irradiated CoFe/IrMn bilayers has been investigated by means of holding the film in a negative saturation field.The distribution of Ga+ion in the IrMn layer obtained by the stopping and ranges of ions in matter(SRIM)simulation.The results show that the texture of IrMn(111)of the ion irradiated bilayer is the same as the non-irradiated ones.The exchange bias and the surface/interface roughness decreases with increasing ion doses.Furthermore,the magnetic stability decreases after ion irradiation.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2015年第21期21081-21084,21088,共5页
Journal of Functional Materials
基金
国家自然科学基金资助项目(51206071)
云南省基金面上资助项目(2011FB037)
校人才培养基金资助项目(KKSY201252017)
关键词
离子辐照
交换偏置场
界面粗糙度
织构
磁性能
ion irradiation
exchange bias field
interface roughness
texture
magnetic properties
