平栅极氧化锌场致发射电子源的制备及性能研究

Fabrication and properties of field emission electron source based on planar-gate triode with ZnO emitters

采用传统的光刻技术制备平栅极场致发射阴极阵列,利用水热法原位合成ZnO发射源,并组装成平栅极ZnO场致发射电子源;利用光学显微镜、SEM和XRD表征其微观结构,分析ZnO发射源的生长机制,并结合场发射测试系统研究其发射特性。结果表明,ZnO发射源是平均直径为300nm的六方纤锌矿氧化锌纳米棒,且沉积在平栅极场致发射阴极阵列的阴极电极表面。场发射测试表明,平栅极ZnO场致发射电子源的发射特性完全由栅极控制。当阳极电压为2000V,器件的开启电压为150V;当栅极电压为275V时,发射电流可达345μA;在栅极电压为260V时,器件的发射电流波动范围为±5.5%左右,发光亮度高达750cd/m^2,表明该器件具有较好的场发射特性。

Field emission electron source based on planar-gate triode with ZnO emitters were fabricated by conventional photolithography and hydrothermal method. The optical microscopy,X-ray diffraction( XRD) and scanning electron microscopy( SEM) were employed to characterize the microstructures and morphologies of the as-grown samples and the growth mechanism was discussed. Its field emission characteristics were also investigated. The experimental results show that the average diameter of ZnO nanorods with hexagonal wurtzite structure was approximately 300 nm and ZnO emitters are synthesized on the cathode of planar-gate triode. The field emission measurements show that the emission properties of electron source based on planar-gate triode with ZnO emitters are completely modulated by gate voltage. The turn-on voltage was around 150 V and anode current can reach to 345 μA when anode voltage and gate voltage was set to 2 000 and275 V,respectively. The emission current fluctuation was approximately ± 5. 5% for 400 min and luminous brightness can come to 750 cd / m^2 at the gate voltage of 260 V,indicating that the fabricated device have a good emission performance.