硫化法在金属箔片衬底上制备ZnS薄膜研究

Study on the growth of ZnS thin films on metal foil substrate by sulfurization method

采用铝箔作为衬底材料,用溅射Zn薄膜再硫化的两步法制备ZnS薄膜,对薄膜进行XRD、EDS和SEM测试,分析硫化温度对薄膜特性的影响。实验结果表明,硫化温度400℃可确保Zn与S反应生成ZnS,薄膜择优取向为(111)晶面。提高硫化温度可增大(111)衍射峰的强度和晶粒尺寸,即提高ZnS薄膜的结晶度。所制备薄膜的组分接近ZnS化学计量比,且表现出贫Zn和富S特性,说明已发生充分的硫化反应。薄膜表面平滑且无裂纹,由致密排列的晶粒组成。实验结果说明采用硫化法在铝箔衬底上制备ZnS薄膜的可行性。

The ZnS thin films were deposited on aluminum foil substrates by the two-step method of sulfurization of sputtered Zn thin films. The effect of sulfurization temperature on the properties of thin films was analyzed by the XRD,EDS,and SEM measurements. The experimental results show that the sulfurization temperature of 400 ℃ can ensure the formation of ZnS by the reaction of Zn and S. The preferred orientation was along the( 111) plane. With increasing sulfurization temperature,the intensity of( 111) peak and the grain size enhance,that was,the crystallinity of Zn S thin films improves. The compositions of fabricated thin films are close to the stoichiometry of ZnS and show Zn-poor and Srich properties,indicating the full sulfurization of Zn. The surfaces of thin films are compact,smooth,crack-free,and composed of grains. The experimental results reveal the feasibility of deposition of ZnS thin films on aluminum foil substrate by sulfurization method.