Identification and characterization of single crystal Bi_(2)Te_(3-x)Se_(x) alloy 被引量：1

单晶Bi_(2)Te_(3-x)Se_(x)合金的鉴定与表征（英文）

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摘要 The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88Se0.12 solid solution single crystal has been grown using the Czochralski method. Monitoring of structure changes of the sample was carried out by electron microscope. The elemental composition of the studied alloy was obtained by energy dispersive spectrometry （EDS） analysis and empirical formula of the compound was established. X-ray diffraction analysis confirmed that the Bi2Te2.88Se0.12 sample was a single phase with rhombohedral structure. The behavior upon heating was studied using differential thermal analysis （DTA） technique. Changes in physical and chemical properties of materials were measured as a function of increasing temperature by thermogravimetric analysis （TGA）. The lattice parameters values obtained by X-ray powder diffraction analyses of Bi2Te2.88Se0.12 are very similar to BizTe3 lattice constants, indicating that a small portion of tellurium is replaced with selenium. The obtained values for specific electrical and thermal conductivities are in correlation with available literature data. The Vickers microhardness values are in range between HV 187 and HV 39.02 and decrease with load increasing. It is shown that very complex process of infrared thermography can be applied for characterization of thermoelectric elements and modules. 研究基于Bi2Te3合金的n型半导体的实验制备。该材料可用于制备热电散热器和发电设备。采用Czochralski法制备Bi2Te2.88Se0.12固溶单晶体。采用电子显微镜研究样品的组织变化。利用EDS分析实验合金的成分,并确立化合物的经验分子式。XRD表明Bi2Te2.88Se0.12样品为具有斜方六面体结构的单晶。利用差热分析研究合金的加热行为。利用热重分析研究材料的物理和化学性能随温度的变化。从XRD分析得到的Bi2Te2.88Se0.12晶格参数与Bi2Te3的非常相近,表明只有少部分Te被Se取代。所得的单晶的比电导率和比热导率与已有数据相符。所得维氏显微硬度为HV 187~39.02,且随着载荷增加,硬度降低。结果表明可以采用红外热成像法对热电元件和模块进行表征。

作者 Emina POZEGA Svetlana IVANOV Zoran STEVIC Ljiljana KARANOVIC Rudolf TOMANEC Lidija GOMIDZELOVIC Ana KOSTOV

机构地区 Mining and Metallurgy Institute Bor Technical Faculty Bor Faculty of Mining and Geology

出处《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第10期3279-3285,共7页 中国有色金属学报（英文版）

基金 "Development of ecological knowledge-based advanced materials and technologies for multifunctional application" (Grant No.TR34005) "New approach to designing materials for energy conversion and storage" (Grant No.OI172060) "0-3D nanostructures for application in electronics and renewable energy sources:synthesis,characterisation and processing" (Grant No.III45007)

关键词 Bi_(2)Te_(3) Bi_(2)Te_(3-x)Se_(x) single crystal semiconductor thermoelectrical properties hardness thermovision imaging Bi_(2)Te_(3) Bi_(2)Te_(3-x)Se_(x) 单晶半导体热电性能硬度热视成像

分类号 TG146 [金属学及工艺—金属材料]

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参考文献32

1PO'EGA E, IVANOV S, STEVIC Z, VUKOVIC N, GOM1DZELOVIC L, MARKOVIC I. SEM-EDS analysis and microindention hardness study of n-type doped BiTeSe alloy single crystals [C]//Proceedings of the 45th International October Conference on Mining and Metallurgy. Bor, Serbia: IRM, 2013: 584-587.
2王一夫,夏庆林,潘留仙,余燕.First principles calculation on ternary stannide phase narrow band gap semiconductor Na_2MgSn[J].Transactions of Nonferrous Metals Society of China,2014,24(6):1853-1858. 被引量：1
3NIKOLI( P, VUJATOVI( S, IVETIC T, NIKOLIC M, CVETKOVIC O, ALEKSIC O, BLAGOJEVI( V, BRANKOVIC G, NIKOLI( N. Thermal diffusivity of single crystal Bi0.gSb0.1 [J]. Science of Sintering, 2010, 42: 45-50.
4CVEKI( V. Semiconductor diodes and transistors [M]. 3rd ed. Beograd: NewspaperPublishing Company, 1975. (in Serbian).
5KAVEI G, KARAMI M A. Thermoelectric crystals BizTe2.88Se0.12 undoped and doped by CdCl2 or CdBr2 impurities, fabricated and characterized by XRD and Hall effect [J]. Materials Research Bulletin, 2008, 43: 239-243.
6TRIPATHI M N, BHANDARI C M. Material parameters for thermoelectric performance [J]. Journal of Physics, 2005, 65(3): 469-479.
7HOCHBAUM A I, CHEN R, DELGADO R D, LIANG W, GARNETT E C, NAIARIAN M, MAJUMDAR A, YANG E Enhanced thermoelectric performance of rough silicon and nanowires [J]. Nature, 2008, 451 (7175): 163 167.
8RISTI0 S. Electronic components [M]. NiS: Faculty of Electronic Engineering of Nig, 2011. (in Serbian).
9GROVENOR C. Microelectronic materials [M]. Great Britain: Taylor & Francis Group, 1989.
10SUMIGA l, GRDJAN M, HUDJEK J. Thermoelectric modules- physical fundamentals and guidelines for use [J]. Technical Bulletin, 2007, 1(1-2): 5-10. (in Serbian).

二级参考文献32

1SCHARFE S, KRAUS F, STEGMAIER S, SCHIER A, FASSLER T F. Zintl ions, cage compounds, and intennetalloid clusters of group 14 and group 15 elements [J]. Angew Chern Int Ed, 2011, 50: 3630-3670.
2IENCO A, HOFFMANN R, PAPOIAN G. Electron-rich bonding and the importance of s, p mixing as one moves across a period: A lesson from the LiSn system [J]. J Am Chern Soc, 2001,123: 2317-2325.
3FASSLER T F. Structure motifs of sodium stannides on the tin-rich side of the phase diagram [J]. Z Anorg Allg Chern, 2006, 632: 1125-1129.
4FORTNER J, SABOUNGI M L, ENDERBY J E. Carrier density enhancement in semiconducting NaSn and CsPb Pl. Phys Rev Lett, 1995,74: 1415-1418.
5HAARMANN F, GRONER D, BEZUGL Y V, ROSNER H, GRIN Y. Chemical bonding and solid state NMR of alkali metal monostannides MSn (M=Li, Na, K, Rb, Cs) [J]. Z Anorg Allg Chern, 2006,632: 1423-1431.
6DUBOIS F, SCHREYER M, FASSLER T F. NaSn2: A novel binary zintl phase with 2D polyanions of realgar-type units [Sn8]'- [J]. Inorg Chern, 2005, 44(3): 477-479.
7PONOU S, KIM S J, FASSLER T F. Synthesis and characterization of Na,M2+xSnlO-x ("",0.5, M=Zn, Hg) - A doped tetrahedral framework structure [J]. J Am Chern Soc, 2009,131: 10246-10252.
8FASSLER T F, HOFFMANN S. Na7Sn12: A binary zintl phase with a two-dimensional covalently bonded tin framework Pl. Inorg Chern, 2003,42(18): 5474-5476.
9PONOU S, FASSLER T F. Nonclassical bonding in the novel structure of Ba2BiJ and unexpected site preference in the coloring variant Ba2BiSb2 [J]. Inorg Chern, 2004, 43(20): 6124-6126.
10TODOROV I, SEVOV S C. Heavy-metal aromatic rings: Cyclopentadienyl anion analogues Sn,6- and Pb,6- in the zintl phases Na8BaPb6, Na8BaSn6, and Na8EuSll6 [J]. Inorg Chern, 2004, 43(20): 6490-6494.

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1VINING C B. An inconvenient truth about thermo-electrics[J]. Nature Materials, 2009, 8(2): 83-85.
2ZHANG Xiao, ZHAO Li-dong. Thermoelectric materials: Energy conversion between heat and electricity[J]. Journal of Materiomics, 2015, 1(2): 92-105.
3BELL L E. Cooling, heating, generating power, and recovering waste heat with thermoelectric systems[J]. Science, 2008, 321(5895): 1457-1461.
4SNYDER G J, TOBERER E S. Complex thermo- electric materials[J]. Nature Materials, 2008, 7(2): 105-114.
5BASHIR M B A, SAID S M, SABRI M F M, SHNAWAH D A, ELSHEIKH M H. Recent advances on Mg2Si~-xSnx materials for thermo-electric generation[J]. Renewable and SustainableEnergy Reviews, 2014, 37: 569-584.
6VENKATASUBRAMANIAN R, SIIVOLA E, COLPITTS T, O'QUINN B. Thin-film thermo-electric devices with high room-temperature figures of merit[J]. Nature, 2001, 413(6856): 597-602.
7HARMAN T C, TAYLOR P J, WALSH M P, LAFORGE B E. Quantum dot superlattice thermo-electric materials and devices[J]. Science, 2002, 297(5590): 2229-2232.
8NIELSCH K, BACHMANN J, KIML1NG J. Thermoelectric nanostructures: from physical model systems towards nanograined composites[J]. Advanced Energy Materials, 2011, 1: 713-731.
9LI Jing-feng, LIU Wei-shu, ZHAO Li-dong, ZHOU Min. High-performance nanostructured thermoelectric materials[J]. NPG Asia Materials, 2010, 2(4): 152-158.
10SZCZECH J R, HIGGINS J M, JIN S. Enhancement of the thermoelectric properties in nanoscale and nano-structured materials[J]. Journal of Materials Chemistry, 2011, 21(12): 4037-4055.