铝栅化学机械抛光工艺

Chemical mechanical polishing process of aluminum grid

探讨了抛光液组成和机械抛光工艺参数(包括抛光压力、转速、抛光液流速和抛光时间)对铝栅化学机械抛光过程中铝的去除速率的影响,确定抛光液的组成为:氧化剂H_2O_2 1.0%(体积分数,下同),螯合剂FA/O II 0.4%,非离子表面活性剂FA/O I 2.0%,纳米硅溶胶磨料12%,pH 10。粗抛工艺参数为:抛光压力3.0 psi,转速50 r/min,抛光液流速250 m L/min,抛光时间240 s。精抛工艺参数为:抛光压力2.0 psi,转速45 r/min,抛光液流速150 m L/min,抛光时间240 s。粗抛时铝的去除速率为330 nm/min,精抛时铝的去除速率为210 nm/min。通过2种抛光工艺相结合,铝栅表面粗糙度可达13.26 nm。

The influence of composition of polishing solution and mechanical polishing process parameters, including polishing pressure, rotation speed, polishing solution flow rate, and polishing time, on aluminum removal rate during aluminum grid chemical mechanical polishing was studied. The composition of polishing solution was determined as follows： H2O2 as oxidant 1.0vol%, chelating agent FA/O II 0.4%, nonionic surfactant FA/O 12.0%, nano-silica sol abrasive 12%, and pH 10. For rough polishing, the optimized process parameters are： polishing pressure 3.0 psi, rotation speed 50 r/min, polishing solution flow rate 250 mL/min, and polishing time 240 s. For fine polishing, the optimized process parameters are： polishing pressure 2.0 psi, rotation speed 45 r/min, polishing solution flow rate 150 mL/min, and polishing time 240 s. The aluminum removal rate is 330 nm/min during rough polishing and 210 nm/min during fine polishing. By combining the two polishing processes, the surface roughness of aluminum grid reaches 13.26 nm.