基于正交实验法的ZnO薄膜电池制备与光电性能研究

Research on Preparation and Photoelectric Property of ZnO Thin-film Cell Based on the Orthogonal Experiment

采用溶胶-凝胶配合旋涂法在FTO上制备ZnO薄膜,将所制备的薄膜作为光阳极组装成染料敏化太阳能电池,在100 W氙灯为模拟太阳光(100 m W/cm2)下,进行光电性能测试。考虑到影响光电性能的3个工艺参数,即退火温度、镀膜层数、退火时间,利用正交实验法对ZnO薄膜电池光电转化率进行工艺优化,得到最优工艺参数。结论:热处理温度对薄膜的光电性能影响最大,热处理时间影响最小;最优工艺方案为:在500℃下热处理60 min,镀膜6层。

ZnO thin films were prepared by using sol-gel method with the spin coating on the FTO, the film of the preparation which is served as the light anode is assembled into dye-sensitized solar cells to test the photoelectric performance under the 100 W xenon lamp （100 mW/cm2 ） . Affected by three parameters of the photoelectric performance included annealing temperature, film layers and grinding time, orthogonal experiment method was used for process optimization. The results showed that heat treatment temperature affected the photoelectric properties of thin films most, and the time of heat treatment was the smallest. The optimum technological scheme was as follows： heat treatment for 60 min under 500 ℃, 6 layers of coating.