二次大气退火对于非晶铟镓锌氧化物薄膜晶体管电学特性的影响

Effect of Secondary Atmosphere Annealing on Electrical Properties of A-IGZO Thin Film Transistor

介绍了非晶铟镓锌氧化物薄膜晶体管（a-IGZO TFT）的制备,并在不同环境下进行了退火。其中,经过一次退火冷却后再进行第二次退火的器件表现出了最佳的电学性能,相比其他器件有较小的亚阈值摆幅（~1.43V/decade）和更好的磁滞稳定性。通过对比其他退火条件下的器件表现与工艺,发现在一次退火基础上增加的较短时间（30min）退火是这些显著提高的主要原因。这说明,在a-IGZO TFT进行了一次退火并冷却后,通过引入二次退火使得a-IGZO薄膜表面平整化和结构密实化,器件性能仍然有提高的空间。

Amorphous indium gallium zinc oxide thin film transistors（a-IGZO TFTs）were fabricated and annealed under different environment.Compared to devices annealed at one time,the secondary annealing devices show better electrical properties and have a smaller subthreshold swing（~1.43V/decade）and better magnetic viscosity stability.By comparing the performance and technology of the devices with different annealing treatments,it is found these significant improvements are duo to the additional relatively short second annealing（about 30min）after the first annealing treatment.This illustrates that a-IGZO films with smooth surface and dense structure can be obtained by introducing the second annealing treatment to a-IGZO TFT.