4700V碳化硅PiN整流二极管

4700V SiC PiN Rectifier

碳化硅Pi N二极管是一种理想的高压二极管器件,具有高阻断电压以及高电流导通密度的特点。通过使用有限元分析的方法对器件外延层参数以及终端结构进行了仿真,提出了优化的器件原胞和终端设计。基于50μm厚、掺杂浓度为1.5×10^(15)cm^(-3)的N型低掺杂外延,制备了电压阻断能力达到4 700V的高压碳化硅整流二极管。制备的器件具有较低的漏电流以及良好的正向导通能力,在100A/cm^2的电流导通密度条件下,器件的最低正向导通压降为3.6V。为进一步研制高压大功率碳化硅二极管器件模块提供了良好的基础。

SiC PiN diode is known as an ideal high voltage rectifier in power electronics. Base on extensive numerical simulations on epi-layer parameters and termination structures, an optimized device design is put forward. With a 50μm thick drift layer and 1.5×10^15cm-3 N-type doping concentration, the fabricated PiN rectifier presents a high blocking voltage of 4 700V with both low leakage current and superior conduction capability. At the current conduction density of 100A/cm2, the minimum on-state voltage of fabricated device is 3.6V.