干法刻蚀工艺对TFT-LCD Flicker改善的研究

Improvement of flicker TFT-LCD by dry etching process

为了对TFT-LCD中的闪烁不良进行改善,本文通过研究TFT-LCD中干法刻蚀（Nplus Etch）对TFT特性的影响,以此对刻蚀条件（Power、Gas）进行优化,达到降低Photo-Ioff的目的。实验结果表明,当干法刻蚀主工艺条件为：Source/Bias=4k/5k、Press=90mT、SF6/O2=1.1k/3kml/min,AT Step条件为：Source/Bias=2k/2k、Press=100mT、SF6/O2=3k/3kmL/min时,Photo-Ioff由量产最初的58.15降至20.52,闪烁由15%-30%降至10%以下。干法刻蚀工艺条件的优化对TFT特性以及闪烁有明显改善效果。

To improve the flicker in TFT-LCD,by studying the influence of Dry Etch（Nplus Etch）on TFT characteristics,the etching conditions （power and gas）were optimized,and the Photo-Iof was reduced,then the flicker was improved.Experimental results show that when the main process condi-tions of Nplus Etch were：Source/Bias=4 k/5 k,Press=90 mT,SF6/O2 =1.1 k/3 kmL/min and the conditions of AT Step were：Source/Bias=2 k/2 k,Press=100 mT,SF6/O2 =3 k/3 kmL/min,the Photo-Iof fell from 58.15 to 20.52 and the flicker fell from 15%-30% to 10% or less.The optimization of Dry Etching process has obvious improvement to TFT characteristics and flicker.