退火处理对磁控溅射制备Ga掺杂ZnO薄膜性能的影响

Influence of annealing treatment on properties of Ga-doped ZnO thin films deposited by RF magnetron sputtering

采用磁控溅射法在普通玻璃上制备了Ga掺杂ZnO(GZO)薄膜,研究了退火处理对GZO薄膜组织结构、表面形貌及光电性能的影响,并利用扫描电子显微镜、X射线衍射仪、紫外分光光度计、四探针测试仪等对GZO薄膜的表面形貌、晶体结构、透光率及电阻率等进行测量与表征。结果表明:400~800℃退火对GZO薄膜的生长方式影响较小,所制薄膜均在(002)晶向沿c轴择优取向,退火温度对薄膜表面形貌影响较大,退火温度为600℃时,薄膜表面致密、平整,结晶质量最好,薄膜的透光率超过95%,电阻率最低为4.9×10^(-4)?·cm。

Effects of annealing temperature on microstructure, surface morphology and photoelectric properties of Ga-doped ZnO （GZO） thin films prepared by magnetron sputtering system on common glass were studied. The surface morphology, crystal structure, transmittance and resistivity of the GZO thin films were measured and characterized by the use of scanning electron microscopy, X-ray diffraction, UV spectrophotometer and four probe tester. The results show that the growth mode of GZO thin film is less affected by the annealing temperature of 400-800℃. The thin films are in （002） crystal orientation along the c axis. Annealing temperature has a greater influence on the surface morphology of the films. When the annealing temperature is 600 ℃, the film surface is compact and smooth, and the crystalline quality is the best. The transmittance of the film is over 95%, the lowest resistivity is 4.9×10^-4Ω·cm.