摘要
建立了三维硅通孔(three-dimension through silicon via,3D-TSV)互连结构有限元分析模型,对该模型进行了随机振动加载有限元分析.选取TSV高度、TSV直径、微凸点高度和微凸点直径四个结构参数作为关键因素,采用水平正交表L16(45)设计了16种不同结构参数的3D-TSV互连结构,获取了这16种3D-TSV互连结构随机振动应力数据并进行了方差分析.结果表明,在置信度为99%的情况下,TSV高度对3D-TSV互连结构随机振动应力有显著影响,因素显著性的排序由大到小为TSV高度最大,其次为TSV直径,再次为微凸点直径,最后是微凸点高度;单因子变量分析表明,TSV互连结构应力应变随TSV高度的增加而增大.
The 3D finite element analysis models of 3DTSV interconnect structure were developed. By using ANSYS,the finite element analysis of the stress distribution in the model was performed under the condition of thermal-structure coupling.The TSV height and the TSV diameter,the micro-bump height and the micro-bump diameter were selected as four key configuration parameters,combinations were designed. By using an L16( 45) orthogonal array the 3D-TSV which have 16 different configuration parameters' levels. The maximum stress values within3D-TSV were obtained. Variance analysis was performed based on the values of stress. The results show that the TSV height has highly significant impact on the stress of 3D-TSV under random vibration with 99% confidence. The TSV height,the TSV diameter,the micro-bump diameter and the micro-bump height affect the stress of 3D-TSV in a descending order. The single-factor analysis of variance shows that the stress and strain in TSV interconnect structure increase with the height of TSV.
出处
《焊接学报》
EI
CAS
CSCD
北大核心
2015年第11期17-20,113-114,共4页
Transactions of The China Welding Institution
基金
国家自然科学基金资助项目(51465012)
广西壮族自治区自然科学基金资助项目(2015GXNSFCA139006
2013-GXNSFAA019322)
关键词
三维叠层芯片封装
硅通孔
随机振动
有限元分析
方差分析
3D stacked IC package
through silicon via
random vibration
finite element analysis
variance analysis