摘要
Sn O2薄膜是一种宽禁带半导体材料(3.6 e V),且在平板显示器、太阳能电池和光电子器件等领域有着广阔的应用前景,引起了国内外极大的关注。目前,所制备的本征Sn O2薄膜的载流子浓度为8.52×1020 cm-3;经过n型化后Sn O2薄膜的载流子浓度可达1021 cm-3。所制备的本征Sn O2薄膜的带隙为3.6 e V,经过p型化后Sn O2薄膜的带隙可达3.8 e V。鉴于Sn O2导电薄膜光电性质的重要性,就Sn O2薄膜的制备方法、n型化和p型化掺杂改性进行了综述。
SnO2 thin film is a wide band gap semiconductor material （3.6 eV）which has broad application prospects in the field of flat panel displays, solar cells and optoelectronic devices. And it has aroused great attention all around the world. Currently, the carrier concentration of SnO2 film is 8.52×10^20 cm^-3, but the carrier concentration of n-type SnO2 film is 10^21 cm^-3. The bandgap of SnO2 film is 3.6 eV, but the bandgap of p-type SnO2 film is 3.8 eV. The methods to prepare SnO2 film and modify its performance by n-type and p-type doping are reviewed.
出处
《电子工艺技术》
2015年第6期315-318,共4页
Electronics Process Technology
基金
广东省自然科学基金项目(项目编号:S2011010001758)
广州市天河区科技计划项目(项目编号:2011B010400022
11C52090779
2012J2200031
116ZH069)
