摘要
采用双槽电沉积法制备了巨磁电阻（Giant Magnetorsistance;GMR）材料[NiFe/Cu/Co/Cu]n 多层纳米线阵列,并以其为磁传感器芯片,设计并制备了GMR位移传感器,在不同温度下测试了其灵敏度.研究表明,该GMR 位移传感器的输出电压与位移具有较好的线性关系,在10-40℃环境温度内具有良好的稳定性.与[NiFe/Cu/Co/Cu]n 多层膜作传感器芯片相比,以[NiFe/Cu/Co/Cu]n 多层纳米线作为芯片时传感器灵敏度更高.
High ordered [NiFe/Cu/Co/Cu]_n multilayered nanowires for the chip of displacement sensor were fabricated by the electrodopsition with double cells. The research showed that the displacement sensor has high temperature stability through at 10-40 ℃ with the simple linear relationship between output voltage and displacement. Compared with the sensor using [NiFe/Cu/Co/Cu]_n multilayers,the sensor using [NiFe/Cu/Co/Cu]_n multilayered nanowires has a better performance.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2015年第24期24118-24122,共5页
Journal of Functional Materials
基金
天津市自然科学基金重点自助项目(08JCZDJC17400)
