5管SRAM单元的抗辐射性能研究

Research on the Radiation Robustness of 5T SRAM Cell

利用3DTCAD仿真,在45nm体硅工艺下,对5管SRAM单元和传统6管SRAM单元的抗辐射性能进行了对比研究。结果表明,5管SRAM单元的敏感面积更小,由该单元构成的SRAM阵列更难发生多位翻转。提出了一种带额外保护环的5管SRAM单元抗辐射加固策略,这种加固策略没有面积开销,模拟结果证实了该加固策略的有效性。

Using 3D TCAD simulation, the radiation robustness of 5T SRAM cell was compared with that of the conventional 6T SRAM cell in 45 nm bulk CMOS process. The research indicated that the 5T SRAM cell had a smaller sensitive volume. Multiple cells upset （MCU） was also less likely to happen in 5T SRAM. Moreover, a kind of 5T SRAM with additional guard ring hardening scheme was proposed. This hardening scheme could make full use of the chip area and its effectiveness was verified by the simulation results.