硅基雪崩光电探测器倍增层掺杂的研究

Optimal Simulation of Doping Parameters for Multiplication Region of Si Avalanche Photodiode

硅基雪崩光电探测器的器件性能与倍增层的掺杂浓度有着密切联系。研究了硅基雪崩光电探测器倍增层的掺杂浓度对雪崩击穿电压和光谱响应度等特性的影响。在硼的注入剂量由5.0×1012 cm-2减小为2.5×1012cm-2时,倍增层内电场强度逐渐降低,吸收区电场强度迅速增大,器件的雪崩击穿电压由16.3V迅速上升到203V,而光谱响应在95%的击穿电压下,峰值响应波长由480nm红移至800nm,对应的响应度由11.2A/W剧增到372.3A/W。综合考虑光谱响应和雪崩击穿电压的影响,在硼注入剂量为3.5×1012 cm-2时,可获得击穿电压为43.5V和响应度为342.5A/W的器件模型,对实际器件的制备具有一定参考价值。

The influences of doping dose of multiplication region on the breakdown voltage and spectral response of Si APD were analyzed.The simulation results show that the breakdown voltage of the Si APD quickly increases from 16.3Vto 203 Vand the peak response wavelength shows a red shift from 480 nm to 800 nm,correspondingly,the peak responsibility increases from11.2 A/W to 372.3 A/W,when the boron implantation dose in the multiplication region decreases from 5.0×1012 cm-2 to 2.5×1012 cm-2.According to the above simulation,the optimal boron implantation dose of 3.5×1012 cm-2 was obtained,and the device exhibits low breakdown voltage of 43.5 V with peak responsibility of 342.5 A/W at 800 nm near the breakdown voltage.