摘要
时间延迟积分电荷耦合器件(TDI CCD)主要应用于弱光信号探测,其在强光应用场合容易出现弥散现象。针对该问题,研制了横向抗弥散多光谱TDI CCD图像传感器。该器件包含四个多光谱段(B1~B4区),有效像元数为3 072元,像元尺寸为28μm×28μm。大像元可以在弱光环境下提供良好的光谱区分能力,通过滤光片可获得蓝光、绿光、红光和近红外波段的图像。为了减小抗弥散对器件满阱电子数的不利影响,采用了紧凑的抗弥散结构,仅占像元面积的7.1%。器件满阱电子数为500ke-,抗弥散能力为100倍,读出噪声小于等于70e-,动态范围大于等于7143∶1。
Time-delay-integration charge-coupled devices(TDI CCD)are mainly used for detection of low intensity light,but image blooming usually appears under high light intensity.To overcome this problem,a high performance multispectral TDI CCD with lateral anti-blooming ability was developed.The imaging sensor consists of four multispectral bands(B1~B4zone),with an array amount of 3 072columns and a pixel size of 28μm×28μm.The large pixel size can provide excellent ability of spectral discrimination,and the sensor can collect blue,green,red and near-infrared images with hybrid optical filter.A compact anti-blooming structure that only occupies an area ratio of 7.1% was used to minimize the effect of anti-blooming on the full well capacity of the sensor.The full-well capacity of 500ke-,anti-blooming ability of 100×,readout noise of no more than 70e-and a dynamic range of no less than 7 143∶1were achieved.
作者
廖乃镘
刘绪化
刘昌林
张明丹
李仁豪
李金
何达
LIAO Naiman;LIU Xuhua;LIU Changlin;ZHANG Mingdan;LI Renhao;LI Jin;HE Da(Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN;Haizhuang Guangzhou Bureau,Guangzhou 510000,CHN)
出处
《半导体光电》
CAS
北大核心
2019年第1期17-19,24,共4页
Semiconductor Optoelectronics